Defect Chemistry of Donor‐Doped BaTiO3
- 1 April 1984
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 67 (4), 285-288
- https://doi.org/10.1111/j.1151-2916.1984.tb18849.x
Abstract
Donor additions to BaTiO3 up to a few tenths atom percent are compensated by electrons and the resulting electrical conductivity is independent of temperature and Po2 at 700° to 1000°C. The conductivities are impurity-insensitive at very low Poz and high temperature where reduction is the major source of defects. Variation in the site occupation ratio (A/B in ABO3 has a small effect on the conductivities for donor additions in the 100 ppm range. Nb is more effective as a donor than is Al as an acceptor, and Nb can compensate approximately 2½ times as much Al on an atomic basis.Keywords
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