Annealing effect of SnO2 films prepared by chemical vapor deposition: Evidence of chlorine removal by auger electron spectroscopy and rutherford back-scattering spectrometry studies
- 31 January 1985
- journal article
- Published by Elsevier BV in Solar Cells
- Vol. 13 (3), 301-307
- https://doi.org/10.1016/0379-6787(85)90023-7
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Post-deposition annealing of sputtered zinc-oxide thin filmsMaterials Letters, 1984
- Optical and electrical properties of RF-sputtered indium–tin oxide filmsphysica status solidi (a), 1983
- Microcomputer approach to elemental depth profiling with Auger electron spectrometryAnalytical Chemistry, 1981
- A thermodynamic analysis of the deposition of SnO2 thin films from the vapor phaseThin Solid Films, 1979
- Fabrication and Characterization of SnO2/n-Si Solar CellsJapanese Journal of Applied Physics, 1979
- Mechanism of CVD Thin Film SnO2 FormationJournal of the Electrochemical Society, 1978
- Physical Properties of SnO2 Materials: I . Preparation and Defect StructureJournal of the Electrochemical Society, 1976
- A Study of SnO[sub 2] Thin Films Formed by Sputtering and by AnodizingJournal of the Electrochemical Society, 1974
- Chemical Composition and Electrical Properties of Tin Oxide Films Prepared by Vapor DepositionJournal of the Electrochemical Society, 1973
- Tin Oxide Thin Film TransistorsJapanese Journal of Applied Physics, 1970