CMOS Mixed-Signal Circuit Process Variation Sensitivity Characterization for Yield Improvement
- 1 September 2006
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 365-368
- https://doi.org/10.1109/cicc.2006.320950
Abstract
A mixed-signal circuit's performance and yield dependency on process variation are investigated with numerical circuit solution, statistical simulation, and implemented circuit measurement in 65nm partially-depleted silicon-on-insulator CMOS process. Increased relative variation in 65nm process is examined with site-to-site and wafer-to-wafer process variations. A current-controlled oscillator's performance and device threshold voltages are cross-correlated using simulation and RF measurement. Up to 93.9% cross-correlation between oscillation frequency and device threshold voltage is obtained, and strong model-to-hardware correlation is observed through statistical analysis of simulation result and circuit measurement. The yield learning process of design, simulation, measurement, and statistical analysis is proposedKeywords
This publication has 2 references indexed in Scilit:
- Performance Variations of a 66GHz Static CML Divider in 90nm CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Impact of design-manufacturing interface on SoC design methodologiesIEEE Design & Test of Computers, 2004