Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation

Abstract

Damage production was studied in 250-MeV Xe-ion irradiated single-crystalline InP by means of Rutherford backscattering spectrometry using a channeling technique and cross-section TEM. Different concentrations and types of defects are created at different depths of the trajectory due to the different dominating interaction processes. Depending on the ion fluence the formation of discontinuous tracks and amorphous layers was registered in the depth region of high electronic energy loss of the incident ions. The observed findings are interpreted as the effect of a thermal spike in combination with damage accumulation resulting from imperfect epitaxial recrystallization of the molten ion tracks.