Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films

Abstract

With an n -type or p -type semiconductor as a top electrode in contact with ferroelectric Pb(Zr 0.53 Ti 0.47 ) O 3 thin film,polarization fatigue has been studied to investigate the effect of charge carrier injection. Electron injection is shown to be correlated with fatigue while hole injection is not. Current blocking by an insulating SiO 2 layer prevents fatigue as well. The enhanced mobility of oxygen vacancies, partially de-ionized by association with the injected electrons, is proposed to be the mechanism for the electron effect.