Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond
- 14 May 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (22), 4493-4495
- https://doi.org/10.1063/1.1756201
Abstract
We have used the technique of ion beam induced charge with a 2 MeV microprobe to image particle detectors fabricated from polycrystalline chemical vapor deposited diamond as a function of temperature. We find that detectors which display a thermally stimulated current peak at display increased charge collection efficiency when heated above that temperature. The probability of detecting the impact of a single ion at room temperature was less than 2%, but this probability rises to over 80% at We model this effect by showing that charge trapped at grain boundaries is liberated at elevated temperatures and this results in an increased electric field within the detector volume and hence a raised charge collection efficiency.
Keywords
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