Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures
- 1 May 2006
- journal article
- Published by IOP Publishing in Chinese Physics
- Vol. 15 (5), 1060-1066
- https://doi.org/10.1088/1009-1963/15/5/032
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Temperature dependence of Hall electron density of GaN-based heterostructuresChinese Physics, 2004
- High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substratesApplied Physics Letters, 2002
- Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructuresApplied Physics Letters, 2002
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyJournal of Applied Physics, 2001
- AlGaN/AlN/GaN high-power microwave HEMTIEEE Electron Device Letters, 2001
- Band parameters for III–V compound semiconductors and their alloysJournal of Applied Physics, 2001
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructuresJournal of Applied Physics, 1997
- A self-consistent solution of Schrödinger–Poisson equations using a nonuniform meshJournal of Applied Physics, 1990