Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically‐Vapor‐Deposited Silicon Carbide
- 1 April 1995
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 78 (4), 1107-1110
- https://doi.org/10.1111/j.1151-2916.1995.tb08449.x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A Comparison of the Oxidation Kinetics of SiC and Si3 N 4Journal of the Electrochemical Society, 1995
- Oxidation Kinetics of Chemically Vapor‐Deposited Silicon Carbide in Wet OxygenJournal of the American Ceramic Society, 1994
- Theoretical Aspects of the Oxidation of Silica-Forming CeramicsPublished by Springer Science and Business Media LLC ,1994
- Oxygen mobility in silicon dioxide and silicate glasses: a reviewJournal of the European Ceramic Society, 1992
- The effect of sodium contamination on the oxidation of single crystal silicon carbideCorrosion Science, 1992
- Some New Perspectives on Oxidation of Silicon Carbide and Silicon NitrideJournal of the American Ceramic Society, 1991
- Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal SiliconJournal of the American Ceramic Society, 1989
- Kinetics of Crystallization of Stoichiometric SiO2 Glass in H2O AtmospheresJournal of the American Ceramic Society, 1966