Quantitative simulation of a resonant tunneling diode
- 1 April 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (7), 3207-3213
- https://doi.org/10.1063/1.364151
Abstract
Quantitative simulation of an InGaAs/InAlAs resonant tunneling diode is obtained by relaxing three of the most widely employed assumptions in the simulation of quantum devices. These are the single band effective massmodel (parabolic bands), Thomas-Fermi charge screening, and the Esaki-Tsu 1D integral approximation for current density. The breakdown of each of these assumptions is examined by comparing to the full quantum mechanical calculations of self-consistent quantum charge in a multiband basis explicitly including the transverse momentum.Keywords
This publication has 17 references indexed in Scilit:
- Quantum device simulation with a generalized tunneling formulaApplied Physics Letters, 1995
- Inadequacy of the one-dimensional approximation for resonant-tunneling-diode current-voltage calculationsPhysical Review B, 1995
- Quantum-well states of InAs/AlSb resonant-tunneling diodesPhysical Review B, 1993
- X-valley tunneling in single AlAs barriersJournal of Applied Physics, 1992
- Multiband treatment of quantum transport in interband tunnel devicesPhysical Review B, 1992
- The I-V characteristics of double-barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetryJournal of Applied Physics, 1991
- Tight-binding model for GaAs/AlAs resonant-tunneling diodesPhysical Review B, 1991
- Role of carrier equilibrium in self-consistent calculations for double barrier resonant diodesSuperlattices and Microstructures, 1990
- Band mixing in semiconductor superlatticesPhysical Review B, 1985
- Tunneling in a finite superlatticeApplied Physics Letters, 1973