Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
- 1 November 2009
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 106 (9), 094101
- https://doi.org/10.1063/1.3246835
Abstract
In this work, the physical and electrical properties of (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of low-cost, manufacturable-friendly TiN electrodes. Physical analyses show that the film crystallization temperature, its texture and morphology strongly depends on the Sr/Ti ratio. Such physical variations have a direct impact on the electric properties of based capacitors. It is found that Sr-enrichment result in a monotonous decrease in the dielectric constant and leakage current as predicted by ab initio calculations. The intercept of the EOT vs physical thickness plot further indicates that increasing the Sr-content at the film interface with the bottom TiN would result in lower interfacial equivalent-oxide thickness.
Keywords
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