Long monolithic cavity VCSELs for high singlemode output power
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (3), 178-179
- https://doi.org/10.1049/el:20010103
Abstract
The authors report on selectively oxidised VCSELs with an integrated n-GaAs spacer of up to 8.0 µm length showing a record 5.4 mW singlemode (30 dB SMSR) output power at 980 nm wavelength for a 6.5 µm aperture diameter device.Keywords
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