Resonant Raman Effect in Semiconductors

Abstract
Light scattering experiments on semiconductors are discussed in which the energy of the incident photon from the laser or that of the Raman-scattered photon is nearly coincident with that of an electronic transition in the scatterer. Experimental data on ZnTe, CdS, InAs, ZnSe, and GaP are analyzed, and a discussion of LO-overtone scattering mechanisms is presented. Some additional experiments are proposed and discussed.