A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition
- 1 August 2006
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 293 (2), 273-277
- https://doi.org/10.1016/j.jcrysgro.2006.05.056
Abstract
No abstract availableKeywords
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