1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology
- 1 December 2019
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 2.2.1-2.2.4
- https://doi.org/10.1109/iedm19573.2019.8993551
Abstract
High density 1Gb embedded STT-MRAM in 28nm FDSOI technology was successfully demonstrated. Based on the highly reliable and manufacturable eMRAM technology, high yield over 90% was achieved at the operating temperature from −40°c to 105°c with satisfying read, write function and 10 years retention at 105°c. These results are mainly attributed to the advanced process for better control of MTJ CD, highly manufacturable process window and robust circuit design for high density chip. MTJ properties can be systematically adjusted by tailoring the MTJ stack and MTJ module process. Improved endurance up to 1E10 cycles was achieved to broaden eMRAM applications to eDRAM replacement.Keywords
This publication has 6 references indexed in Scilit:
- Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2019
- Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm LogicPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2018
- Embedded STT-MRAM in 28-nm FDSOI Logic Process for Industrial MCU/IoT ApplicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2018
- Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logicPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- Embedded STT-MRAM for energy-efficient and cost-effective mobile systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014