Naphtho[2,1-b:6,5-b′]difuran: A Versatile Motif Available for Solution-Processed Single-Crystal Organic Field-Effect Transistors with High Hole Mobility

Abstract

We here report naphtho[2,1-b:6,5-b′]difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm² V^–1 s^–1 along with high I_on/I_off ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.