High-performance 2mm gate width GaN HEMTs on 6H-SiC with output power of 22.4W@8GHz
- 30 June 2008
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 52 (6), 926-929
- https://doi.org/10.1016/j.sse.2007.12.014
Abstract
No abstract availableKeywords
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