Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C
- 1 June 1995
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 360 (1-2), 438-444
- https://doi.org/10.1016/0168-9002(94)01728-x
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experimentsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Study of neutron irradiated silicon counters with a fast amplifierNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993