Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
- 28 June 2006
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (7), 1541-1547
- https://doi.org/10.1021/nl060547x
Abstract
The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 × 1017 to 6 × 1018 cm-3 were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.Keywords
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