Historical aspects of crystal growth technology
- 1 April 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 211 (1-4), 1-12
- https://doi.org/10.1016/s0022-0248(99)00780-0
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Flat YBa2Cu3O7−x layers for planar tunnel-device technologyPhysica C: Superconductivity and its Applications, 1996
- Crystal growth and characterization of “striation-free” KTa1−xNbxO3 (x ≈ 0.26) solid solutionsJournal of Crystal Growth, 1983
- Atomically flat LPE-grown facets seen by scanning tunneling microscopyJournal of Crystal Growth, 1982
- Growth of defect‐free Sr1−xBaxNb2O6 (SBN) crystalsCrystal Research and Technology, 1980
- Nonlinear Optical Phenomena and MaterialsAnnual Review of Materials Science, 1974
- A precise temperature sensor for 600-1600 degrees CJournal of Physics E: Scientific Instruments, 1973
- Accelerated crucible rotation: A novel stirring technique in high-temperature solution growthJournal of Crystal Growth, 1972
- Characterization of potassium tantalate-niobate crystals by electrooptic measurementsMaterials Research Bulletin, 1967
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A - Mathematical and Physical Sciences, 1956
- Crystal growth at high temperaturesDiscussions of the Faraday Society, 1949