Magnetic properties of n-GaMnN thin films
Top Cited Papers
- 20 May 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (21), 3964-3966
- https://doi.org/10.1063/1.1481533
Abstract
GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at. % were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance–voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a above room temperature.
Keywords
This publication has 25 references indexed in Scilit:
- Growth of bulk Ga1−xMnxN single crystalsJournal of Crystal Growth, 2001
- Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devicesMaterials Letters, 2001
- Paramagnetism and antiferromagnetic d–d coupling in GaMnN magnetic semiconductorApplied Physics Letters, 2001
- Magnetic Characteristic of Mn+ Ion Implanted GaN EpilayerJapanese Journal of Applied Physics, 2001
- SpintronicsAmerican Scientist, 2001
- Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd1-xMnxGeP2Japanese Journal of Applied Physics, 2000
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Effects of internal exchange fields on magnetization steps in diluted magnetic semiconductorsPhysical Review B, 1986