Large Discrete Resistance Jump at Grain Boundary in Copper Nanowire
- 7 July 2010
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (8), 3096-3100
- https://doi.org/10.1021/nl101734h
Abstract
Copper is the current interconnect metal of choice in integrated circuits. As interconnect dimensions decrease, the resistivity of copper increases dramatically because of electron scattering from surfaces, impurities, and grain boundaries (GBs) and threatens to stymie continued device scaling. Lacking direct measurements of individual scattering sources, understanding of the relative importance of these scattering mechanisms has largely relied on semiempirical modeling. Here we present the first ever attempt to measure and calculate individual GB resistances in copper nanowires with a one-to-one correspondence to the GB structure. Large resistance jumps are directly measured at the random GBs with a value far greater than at coincidence GBs and first-principles calculations. The high resistivity of the random GB appears to be intrinsic, arising from the scaling of electron mean free path with the size of the lattice relaxation region. The striking impact of random GB scattering adds vital information for understanding nanoscale conductors.Keywords
This publication has 26 references indexed in Scilit:
- Size-Dependent Resistivity in Nanoscale InterconnectsAnnual Review of Materials Research, 2009
- In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter DiffractionJapanese Journal of Applied Physics, 2009
- Resistivity of thin Cu films with surface roughnessPhysical Review B, 2009
- Electronic Transport on the Nanoscale: Ballistic Transmission and Ohm’s LawNano Letters, 2009
- A cryogenic Quadraprobe scanning tunneling microscope system with fabrication capability for nanotransport researchReview of Scientific Instruments, 2007
- Generalized Bloch theorem for complex periodic potentials: A powerful application to quantum transport calculationsPhysical Review B, 2007
- Ultrahigh Strength and High Electrical Conductivity in CopperScience, 2004
- Layer KKR approach to Bloch-wave transmission and reflection: Application to spin-dependent tunnelingPhysical Review B, 1999
- From ultrasoft pseudopotentials to the projector augmented-wave methodPhysical Review B, 1999
- A dislocation model of grain boundary electrical resistivityJournal of Physics F: Metal Physics, 1977