Additionalp32andp12infrared excited-state lines of gallium and indium in silicon

Abstract

Infrared excitation spectra were measured for the $p_{\frac{3}{2}}$ lines of gallium in silicon. Two missing lines were observed, and a previous weak or doubtful one was confirmed. Spectra were also obtained of the $p_{\frac{1}{2}}$ lines of gallium and indium in silicon, demonstrating for the first time the $4p^{\prime }$ line for both dopants. There now exists complete correspondence between all observed excited-state lines of gallium and indium in silicon and the lines of boron and aluminum, and with those predicted by theory. From the new spectral data, the spin-orbit splitting of the valence bands is calculated to be 42.62±0.04 meV.