Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer
- 19 November 2012
- Vol. 9 (5), 727-731
- https://doi.org/10.1002/smll.201201940
Abstract
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102).Keywords
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