Design considerations and development of gate driver for 15 kV SiC IGBT

Abstract

The 15 kV SiC N-IGBT is the state-of-the-art high voltage power semiconductor device developed by Cree. The SiC IGBT is exposed to a peak stress of 10-11 kV in power converter systems, with punch-through turn-on dv/dt over 100 kV/μs and turn-off dv/dt about 35 kV/μs. Such high dv/dt requires ultralow coupling capacitance in the dc-dc isolation stage of the gate driver for maintaining fidelity of the signals on the control-supply ground side. Accelerated aging of the insulation in the isolation stage is another serious concern. In this paper, a simple transformer based isolation with a toroid core is investigated for the above requirements of the 15 kV IGBT. The gate driver prototype has been developed with over 100 kV dc insulation capability, and its inter-winding coupling capacitance has been found to be 3.4 pF and 13 pF at 50 MHz and 100 MHz respectively. The performance of the gate driver prototype has been evaluated up to the above mentioned specification using double-pulse tests on high-side IGBT in a half-bridge configuration. The continuous testing at 5 kHz has been performed till 8 kV, and turn-on dv/dt of 85 kV/μs on a buck-boost converter. The corresponding experimental results are presented. Also, the test methodology of evaluating the gate driver at such high voltage, without a high voltage power supply is discussed. Finally, experimental results validating fidelity of the signals on the control-ground side are provided to show the influence of increased inter-winding coupling capacitance on the performance of the gate driver.