Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
- 15 January 2016
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 16 (2), 1387-1391
- https://doi.org/10.1021/acs.nanolett.5b04840
Abstract
We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.Comment: 13 pages, 3 figureKeywords
Funding Information
- European Research Council (280140)
- Deutsche Forschungsgemeinschaft (SPP-1459)
- Seventh Framework Programme (604391)
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