GaN smart power IC technology
- 23 June 2010
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 247 (7), 1732-1734
- https://doi.org/10.1002/pssb.200983453
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMTIEEE Electron Device Letters, 2009
- High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistorsApplied Physics Letters, 2008
- High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated CircuitsIEEE Electron Device Letters, 2007
- Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement ModeIEEE Transactions on Electron Devices, 2006
- Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatmentIEEE Electron Device Letters, 2006
- High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatmentIEEE Electron Device Letters, 2005
- A robust smart power bandgap reference circuit for use in an automotive environmentIEEE Journal of Solid-State Circuits, 2002