The influence of deep traps on transient current–voltage characteristics of organic light-emitting diodes
- 31 December 2001
- journal article
- Published by Elsevier BV in Organic Electronics
- Vol. 2 (3-4), 105-120
- https://doi.org/10.1016/s1566-1199(01)00017-9
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Space-charge limited conduction with a field and temperature dependent mobility in Alq light-emitting devicesSynthetic Metals, 2001
- Simulation and modeling of C–V curves of OLEDs with trap states for the holesSynthetic Metals, 2001
- Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diodeSynthetic Metals, 2000
- Determination of trap energies in Alq3 and TPDSynthetic Metals, 2000
- Trap states of tris-8-(hydroxyquinoline) aluminum and naphthyl-substituted benzidine derivative using thermally stimulated luminescenceApplied Physics Letters, 1998
- Doping effects in organic electroluminescent devicesJournal of Applied Physics, 1998
- Determination of trapping parameters in poly(p-phenylenevinylene) light-emitting devices using thermally stimulated currentsJournal of Applied Physics, 1998
- Current–voltage characteristic of organic light emitting diodesApplied Physics Letters, 1998
- Spontaneous and reverse-bias induced recovery behavior in organic electroluminescent diodesApplied Physics Letters, 1998
- Nondegenerate continuum model for polymer light-emitting diodesJournal of Applied Physics, 1995