Cyclic PECVD of Ge[sub 2]Sb[sub 2]Te[sub 5] Films Using Metallorganic Sources
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 154 (4), H318-H324
- https://doi.org/10.1149/1.2456199
Abstract
Ge2Sb2Te5Ge2Sb2Te5 (GST) thin films were deposited on SiO2∕SiSiO2∕Si and TiN∕SiTiN∕Si substrates by cyclic metallorganic chemical vapor deposition using Ge(i-C4H9)4Ge(i-C4H9)4 , Sb(i-C3H7)3Sb(i-C3H7)3 , Te(i-C3H7)2Te(i-C3H7)2 as Ge, Sb, and Te precursors, respectively, with the help of Ar+H2Ar+H2 plasma at temperatures ranging from 180 to 290°C290°C . The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C200°C showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a TiN∕WTiN∕W plug.Keywords
This publication has 10 references indexed in Scilit:
- Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance MeasurementsJapanese Journal of Applied Physics, 2006
- SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory DevicesElectrochemical and Solid-State Letters, 2006
- Overview of Phase-Change Chalcogenide Nonvolatile Memory TechnologyMRS Bulletin, 2004
- Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memoryThin Solid Films, 2004
- Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurementsApplied Physics Letters, 2004
- Density changes upon crystallization of Ge2Sb2.04Te4.74 filmsJournal of Vacuum Science & Technology A, 2002
- Study of Oxygen-Doped GeSbTe Film and Its Effect as an Interface Layer on the Recording Properties in the Blue WavelengthJapanese Journal of Applied Physics, 2001
- Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurementsJournal of Applied Physics, 2000
- Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memoryJournal of Applied Physics, 1991
- Atomic layer epitaxyMaterials Science Reports, 1989