V‐defect analysis in green and deep green light emitting diode structures
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6), 1777-1779
- https://doi.org/10.1002/pssc.200778635
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Misfit dislocations in In‐rich InGaN/GaN quantum well structuresPhysica Status Solidi (a), 2006
- Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layersJournal of Applied Physics, 2006
- Suppression of Nonradiative Recombination by V-Shaped Pits inQuantum Wells Produces a Large Increase in the Light Emission EfficiencyPhysical Review Letters, 2005
- Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositionsJournal of Electronic Materials, 2001
- High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiencyApplied Physics Letters, 1999
- Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995