(211)-Orientation Preference of Transparent Conducting In2O3:Sn Films and Its Formation Mechanism
- 7 December 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 3 (12), 4751-4755
- https://doi.org/10.1021/am2012432
Abstract
Dominantly (211)-oriented In2O3:Sn (ITO) transparent conducting oxide (TCO) films were first fabricated at high sputtering power in the weak reducing ambient with superior electrical and optical properties. The dependence of ITO film orientation on growth condition was systematically investigated, and the formation mechanism was studied by surface energy calculation and band structure simulation. The unique properties of the (211)-oriented films should be ascribed to the richest In-terminated surface of the (211) plane, which is tightly correlated with the comparably highest surface energy and highest conduction band surface comparing with the other two typical planes of (222) and (400). The as-prepared (211)-oriented ITO films with the In-rich ending atoms on the surface are of great significance for the transparent electrode applications.Keywords
This publication has 24 references indexed in Scilit:
- Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum levelMicroelectronics Journal, 2008
- Thin film solar cell design based on photonic crystal and diffractive grating structuresOptics Express, 2008
- Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputteringJournal of Electroceramics, 2007
- The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputteringApplied Surface Science, 2007
- Comparison of radio-frequency and direct-current magnetron sputtered thin In2O3:Sn filmsThin Solid Films, 2005
- Phase Transformation Behavior of Nanocrystalline ITO Powders during Heat-Treatment: Oxygen Partial Pressure EffectJournal of Electroceramics, 2004
- Surface treatment effects of indium–tin oxide in organic light-emitting diodesOptical Materials, 2003
- Surface roughness effects and their influence on the degradation of organic light emitting devicesJournal of Materials Science, 2000
- Transport properties of copper-doped indium oxide and indium tin oxide ceramicsphysica status solidi (a), 1992
- Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windowsJournal of Applied Physics, 1986