Photonic High-Power 160-GHz Signal Generation by Using Ultrafast Photodiode and a High-Repetition-Rate Femtosecond Optical Pulse Train Generator
- 12 June 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 20 (6), 10-16
- https://doi.org/10.1109/jstqe.2014.2329940
Abstract
We demonstrate photonic high-power MMW generation at subTHz (160 GHz) frequencies by using ultrafast near-ballistic unitraveling carrier photodiodes (NBUTC-PD), which have a miniaturized active area (24 μm 2 ) and flip-chip bonding package for good heat-sinking. Under optical sinusoidal signal excitation with a ~85% modulation depth, 165-GHz optical-to-electrical 3-dB bandwidth, 18-mA saturation current, +5.11-dBm maximum output power at 160-GHz operating frequency has been demonstrated. In order to further mitigate device-heating, we developed a high-power pulsed optical signal source with increased optical modulation depth: a femtosecond optical short-pulse generator with extremely high repetition rate (160 GHz) and pulsewidth as short as 285 fs. With this novel source, we generated high MMW power (+7.8 dBm) with an effective 120% optical modulation depth at 160 GHz directly from the NBUTC-PD.Keywords
Funding Information
- National Science Council (NSC 101-2221-E-007-103-MY3, NSC 100-2112-M-007-007-MY3)
- Agilent and Asian Office of Aerospace Research and Development (AOARD) (#3230, AOARD-13-4086, AOARD-13-4088)
This publication has 28 references indexed in Scilit:
- Triple transit region photodiodes (TTR-PDs) providing high millimeter wave output powerOptics Express, 2014
- High-power flip-chip mounted photodiode arrayOptics Express, 2013
- Design and Analysis of Ultra-High-Speed Near-Ballistic Uni-Traveling-Carrier Photodiodes Under a 50-$\Omega$ Load for High-Power PerformanceIEEE Photonics Technology Letters, 2011
- Linear-Cascade Near-Ballistic Unitraveling-Carrier Photodiodes With an Extremely High Saturation Current–Bandwidth ProductJournal of Lightwave Technology, 2010
- Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding StructureIEEE Journal of Quantum Electronics, 2009
- Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier PhotodiodeIEEE Photonics Technology Letters, 2008
- High-Current Photodetectors as Efficient, Linear, and High-Power RF Output StagesJournal of Lightwave Technology, 2008
- High-Speed and High-Output InP–InGaAs Unitraveling-Carrier PhotodiodesIEEE Journal of Selected Topics in Quantum Electronics, 2004
- 120-ghz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signalsJournal of Lightwave Technology, 2003
- Loss-less pulse intensity repetition-rate multiplication using optical all-pass filteringIEEE Photonics Technology Letters, 2000