Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode
- 1 May 2013
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 534, 603-608
- https://doi.org/10.1016/j.tsf.2013.01.100
Abstract
No abstract availableKeywords
Funding Information
- National Research Foundation of Korea
- Ministry of Education, Science and Technology (2011-0016618, 2011-0026194/2012-00109)
This publication has 35 references indexed in Scilit:
- Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor depositionJournal of Crystal Growth, 2012
- Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on SiIEEE Electron Device Letters, 2011
- Visible‐Color‐Tunable Light‐Emitting DiodesAdvanced Materials, 2011
- Fast self-heating in GaN-based laser diodesApplied Physics Letters, 2011
- AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structuresApplied Physics Letters, 2010
- Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structuresPhysica Status Solidi (a), 2010
- The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperaturesJournal of Applied Physics, 2007
- Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperaturesApplied Physics Letters, 2007
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974