Planar Nearly Ideal Edge-Termination Technique for GaN Devices
- 6 January 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 32 (3), 300-302
- https://doi.org/10.1109/led.2010.2095825
Abstract
In this letter, a simple edge termination is described which can be used to achieve nearly ideal parallel-plane breakdown voltage for GaN devices. This technique involves implanting a neutral species on the edges of devices to form a high-resistive amorphous layer. With this termination, formed by using argon implantation, the breakdown voltage of GaN Schottky barrier diodes was increased from 300 V for unterminated diodes to 1650 V after termination.Keywords
This publication has 12 references indexed in Scilit:
- Fundamentals of Power Semiconductor DevicesPublished by Springer Science and Business Media LLC ,2008
- Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recoveryApplied Physics Letters, 2006
- Design of edge termination for GaN power Schottky diodesJournal of Electronic Materials, 2005
- Design of junction termination structures for GaN Schottky power rectifiersSolid-State Electronics, 2003
- High current bulk GaN Schottky rectifiersSolid-State Electronics, 2002
- Carrier mobility model for GaNSolid-State Electronics, 2002
- Vertical and lateral GaN rectifiers on free-standing GaN substratesApplied Physics Letters, 2001
- High voltage (450 V) GaN Schottky rectifiersApplied Physics Letters, 1999
- Near-ideal platinum-GaN Schottky diodesElectronics Letters, 1996
- A simple edge termination for silicon carbide devices with nearly ideal breakdown voltageIEEE Electron Device Letters, 1994