Prospects for the ammonothermal growth of large GaN crystal
- 15 July 2007
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 305 (2), 304-310
- https://doi.org/10.1016/j.jcrysgro.2007.04.010
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- New Energy and Industrial Technology Development Organization
This publication has 32 references indexed in Scilit:
- Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layerSemiconductor Science and Technology, 2006
- Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial ProcessesJapanese Journal of Applied Physics, 2006
- Ammonothermal growth of GaN crystals in alkaline solutionsJournal of Crystal Growth, 2006
- Characterization of bulk grown GaN and AlN single crystal materialsJournal of Crystal Growth, 2006
- Pressurized melt growth of ZnO boulesSemiconductor Science and Technology, 2005
- Modeling of ammonothermal growth of nitridesJournal of Crystal Growth, 2003
- Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growthNature Materials, 2003
- Hydrothermal growth of ZnO single crystals and their optical characterizationJournal of Crystal Growth, 2000
- Properties of Lithium‐Doped Hydrothermally Grown Single Crystals of Zinc OxideJournal of the American Ceramic Society, 1965
- Hydrothermal Synthesis of Quartz CrystalsJournal of the American Ceramic Society, 1953