Origin of Stretched Exponential Relaxation for Hopping-Transport Models
- 24 October 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 91 (17), 176602
- https://doi.org/10.1103/physrevlett.91.176602
Abstract
We propose a novel geometric approach to the description of the relaxation phenomena in complex condensed-matter systems. It is shown within a fairly general random site hopping model that the stretched exponential decay law, , originates from the simple and general geometric features of a random distribution of transport and trapping sites in the 3D space. The value of the variable stretching index is determined by the localization radius of hopping electrons. The possibilities for generalization of the obtained results and interpretation of the relevant experimental data are discussed.
This publication has 19 references indexed in Scilit:
- Lifetime of small polarons in iron-doped lithium–niobate crystalsJournal of Applied Physics, 2000
- Stretched exponential relaxation in molecular and electronic glassesReports on Progress in Physics, 1996
- Relaxation processes in supercooled liquidsReports on Progress in Physics, 1992
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- Kohlrausch thermal relaxation in a random magnetPhysical Review Letters, 1987
- Models of Hierarchically Constrained Dynamics for Glassy RelaxationPhysical Review Letters, 1984
- Fractal behavior in trapping and reaction: A random walk studyJournal of Statistical Physics, 1984
- Time Decay of the Remanent Magnetization in Spin-GlassesPhysical Review Letters, 1984
- Diffusion and Trapping of Excitations on FractalsPhysical Review Letters, 1984
- The long time properties of diffusion in a medium with static trapsThe Journal of Chemical Physics, 1982