Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon
Open Access
- 1 November 2013
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 6 (11), 116501
- https://doi.org/10.7567/apex.6.116501
Abstract
Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 ?C and slightly increases from 875 to 900 ?C. The sample annealed at 850 ?C exhibited the lowest Rc of 0.22?0.03 ??mm [specific contact resistivity, ?c=(0.78?0.22)?10-6 ??cm2] with a smooth surface morphology (RMS roughness ?5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface.Keywords
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