Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers

Abstract

In this work, submicron-size (down to 0.273 μm²) spin–dependent tunnel junctions with resistance as low as ∼30 Ω μm² have been fabricated, where the tunneling barrier of ${\mathrm{AlO}}_x$ was formed by in situ natural oxidation. These junctions annealed at 250 °C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance.