On the feasibility of growing dilute CxSi1−x epitaxial alloys
- 19 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8), 734-736
- https://doi.org/10.1063/1.102696
Abstract
Dilute CxSi1−x epitaxial films have been grown on Si(100) by remote plasma‐enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x‐ray diffraction and transmission electron microscopy.Keywords
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