High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
- 26 March 2010
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 3 (4), 041302
- https://doi.org/10.1143/apex.3.041302
Abstract
No abstract availableKeywords
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