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A study on the IGBT's turn-off failure and inhomogeneous operation
Home
Publications
A study on the IGBT's turn-off failure and inhomogeneous operation
A study on the IGBT's turn-off failure and inhomogeneous operation
JY
J. Yamashita
J. Yamashita
EH
E. Haruguchi
E. Haruguchi
HH
H. Hagino
H. Hagino
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17 December 2002
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
45-50
https://doi.org/10.1109/ispsd.1994.583642
Abstract
An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations.
Keywords
INSULATED GATE BIPOLAR TRANSISTORS
CIRCUIT TESTING
ROENTGENIUM
SPACE VECTOR PULSE WIDTH MODULATION
SNUBBERS
SEMICONDUCTOR OPTICAL AMPLIFIERS
TAIL
AUTOMATIC TESTING
SURGES
VOLTAGE
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Open Access
Cited by 20 articles