Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
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Open Access
- 2 June 2017
- journal article
- research article
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
- Vol. 3 (6), e1700589-1700589
- https://doi.org/10.1126/sciadv.1700589
Abstract
The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular “fingerprint” imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus–based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature–specific detectivity higher than 4.9 × 109 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.Keywords
This publication has 39 references indexed in Scilit:
- High-responsivity graphene/silicon-heterostructure waveguide photodetectorsNature Photonics, 2013
- Low-frequency 1/f noise in graphene devicesNature Nanotechnology, 2013
- Broadband high photoresponse from pure monolayer graphene photodetectorNature Communications, 2013
- Photoconductivity of biased grapheneNature Photonics, 2012
- Hybrid graphene–quantum dot phototransistors with ultrahigh gainNature Nanotechnology, 2012
- Synthesis and Identification of Metastable Compounds: Black Arsenic—Science or Fiction?Angewandte Chemie-International Edition, 2012
- One-by-one trap activation in silicon nanowire transistorsNature Communications, 2010
- InAs/GaInSb superlattices as a promising material system for third generation infrared detectorsInfrared Physics & Technology, 2006
- Toward third generation HgCdTe infrared detectorsJournal of Alloys and Compounds, 2004
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987