On the Origin of Contact Resistances of Organic Thin Film Transistors
- 22 June 2012
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 24 (29), 4005-4009
- https://doi.org/10.1002/adma.201201311
Abstract
A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.Keywords
This publication has 17 references indexed in Scilit:
- Scaling limits of organic thin film transistorsOrganic Electronics, 2010
- Electric‐Field‐Induced Gap States in PentaceneAdvanced Materials, 2009
- Pentacene-based organic field-effect transistorsJournal of Physics: Condensed Matter, 2008
- An experimental study of contact effects in organic thin film transistorsJournal of Applied Physics, 2006
- Grain size effects on contact resistance of top-contact pentacene TFTsSynthetic Metals, 2006
- Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic ElectronicsAdvanced Materials, 2005
- The path to ubiquitous and low-cost organic electronic appliances on plasticNature, 2004
- Morphology and electronic transport of polycrystalline pentacene thin-film transistorsApplied Physics Letters, 2003
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003
- Pentacene-based organic thin-film transistorsIEEE Transactions on Electron Devices, 1997