Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction
- 3 May 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (18), 181103
- https://doi.org/10.1063/1.3425663
Abstract
A technique to electrically pump photonic crystal nanocavities using a lateral p-i-n junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.Keywords
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