The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS Structures
- 1 June 2005
- journal article
- Published by Springer Science and Business Media LLC in Russian Physics Journal
- Vol. 48 (6), 584-591
- https://doi.org/10.1007/s11182-005-0174-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Interface properties of HgCdTe metal-insulator-semiconductor capacitorsApplied Physics Letters, 1989
- Low-frequency admittance measurements on the HgCdTe/Photox SiO2 interfaceJournal of Applied Physics, 1986