Epitaxial growth of α-SiC layers by chemical vapor deposition technique
- 31 December 1975
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 31, 72-75
- https://doi.org/10.1016/0022-0248(75)90113-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 8 references indexed in Scilit:
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- Epitaxial Growth of α-SiC from the Vapor PhaseJapanese Journal of Applied Physics, 1971
- Growth Characteristics of Alpha-Silicon CarbideJournal of the Electrochemical Society, 1971
- Etching Characteristics of Silicon Carbide in HydrogenJournal of the Electrochemical Society, 1969
- The etching of -silicon carbideBritish Journal of Applied Physics, 1967
- The Epitaxial Growth of Silicon CarbideJournal of the Electrochemical Society, 1966
- Epitaxial Growth of Silicon Carbide by the Thermal Reduction TechniqueJournal of the Electrochemical Society, 1966
- Photoluminescence of Nitrogen-Exciton Complexes inSiCPhysical Review B, 1963