Probing Antigen−Antibody Binding Processes by Impedance Measurements on Ion-Sensitive Field-Effect Transistor Devices and Complementary Surface Plasmon Resonance Analyses: Development of Cholera Toxin Sensors

Abstract

Impedance measurements on ISFET devices are employed to develop new immunosensors. The analysis of the transconductance curves recorded at variable frequencies, upon the formation of antigen−antibody complexes on the ISFET devices, allows determination of the biomaterial film thicknesses. Complementary surface plasmon resonance measurements of analogous biosensor systems, using Au-coated glass slides as support, reveal similar film thicknesses of the biomaterials and comparable detection limits. A dinitrophenyl antigen layer is immobilized on the ISFET gate as a sensing interface for the anti-dinitrophenyl antibody (anti-DNP-Ab). The anti-DNP-Ab is analyzed with a sensitivity that corresponds to 0.1 μg mL^-1. The assembly of the biotinylated anti-anti-DNP-Ab and avidin layers on the base anti-DNP-Ab layer is characterized by impedance measurements. The development of an ISFET-based sensor for the cholera toxin is described. The anti-cholera toxin antibody is immobilized on the ISFET device. The association of the cholera toxin (CT) to the antibody is monitored by the impedance measurements. The detection limit for analyzing CT is 1.0 × 10^-11 M.