Demonstration of forward inter-band tunneling in GaN by polarization engineering
- 5 December 2011
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (23)
- https://doi.org/10.1063/1.3666862
Abstract
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.Keywords
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