Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition
- 10 April 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (16), 2342-2344
- https://doi.org/10.1063/1.1365410
Abstract
Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.
Keywords
This publication has 19 references indexed in Scilit:
- Chemical and Thin-Film Strategies for New Transparent Conducting OxidesMRS Bulletin, 2000
- Influence of oxygen pressure on the physical properties of dc magnetron reactive sputtered cadmium oxide filmsVacuum, 1997
- Correlations between the optical and electrical properties of CdO thin films deposited by spray pyrolysisThin Solid Films, 1994
- Deposition and properties of cadmium oxide films by activated reactive evaporationThin Solid Films, 1994
- Transparent conducting cadmium oxide thin films prepared by a solution growth techniqueThin Solid Films, 1994
- Electron Concentration and Mobility in Semimetallic CdOCanadian Journal of Physics, 1971
- Electronic conduction and defect equilibria in CdO single crystalsJournal of Solid State Chemistry, 1970
- Electrical and Optical Properties of Sputtered CdO FilmsJapanese Journal of Applied Physics, 1969
- Disorder and Oxygen Transport in Cadmium OxideJournal of Applied Physics, 1962
- Lattice parameter and defect structure of cadmium oxide containing foreign atomsJournal of Physics and Chemistry of Solids, 1960