Formation of the ordered array of Al magic clusters on Si(111)7×7
- 2 October 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (16), 165401
- https://doi.org/10.1103/physrevb.66.165401
Abstract
Deposition of Al onto the Si(111)7×7 surface held at temperatures ranging from 475 to 600 °C has been found to result in the formation of a superlattice of the identical-size nanoclusters (magic clusters). The Al magic clusters appear to have the structure similar to that reported recently for the magic clusters of Ga and In on Si(111): each cluster contains six metal atoms linked by three Si atoms. The present results reveal that at the early stages of deposition all the group III metals demonstrate a distinct tendency for the formation of the magic clusters on Si surfaces.Keywords
This publication has 15 references indexed in Scilit:
- Spontaneous Assembly of Perfectly Ordered Identical-Size Nanocluster ArraysPhysical Review Letters, 2002
- Self-organized two-dimensional lattice of magic clustersPhysical Review B, 2001
- Nanodot Formation on the-Surface by Adatom TrappingPhysical Review Letters, 1999
- Direct Observation of Two Dimensional Magic ClustersPhysical Review Letters, 1998
- Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surfaceSurface Science, 1995
- Scanning tunneling microscopy observation of Al-induced reconstructions of the Si(111) surface: Growth dynamicsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Reconstructed structures in metal/Si(100) surfaces at high temperature observed by scanning tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Low-coverage, low-temperature phase of Al overlayers on the Si(111) α-7×7 structure observed by scanning tunneling microscopyPhysical Review B, 1993
- X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surfacePhysical Review B, 1989
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987