Evidence of electrical activity of extended defects in 3C–SiC grown on Si
- 5 April 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (14), 142104
- https://doi.org/10.1063/1.3383233
Abstract
In this paper, we demonstrate the high electrical activity of extended defects found in 3C–SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistancemicroscopy aimed to study their electrical behavior. Using this technique, complete layer resistancecartography was done. The electrical activity of the extended defects in 3C–SiC was clearly evidenced. Furthermore, the defect activity was estimated to be higher than that of heavily nitrogen doped ( 5 × 10 18 cm − 3 ) 3C–SiC layer.Keywords
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